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p-TiO2/GO heterojunction based VOC sensors: A new approach to amplify sensitivity in FET structure at optimized gate voltage
Measurement ( IF 5.6 ) Pub Date : 2021-06-12 , DOI: 10.1016/j.measurement.2021.109721
Teena Gakhar , Arnab Hazra

Graphene/graphene oxide (GO) field effect transistor (FET) is widely investigated for the mainstream electronics. On the other hand, GO and TiO2 nanocomposite is extensively reported for sensing and energy applications. In the current study, we developed p-type TiO2/GO hybrid channel based back gated FET sensors for the detection of volatile organic compounds (VOCs) of very low concentrations. High sensitivity at low concentration of VOC was achieved by high surface reactivity towards VOC by p-TiO2/GO heterojunctions and limited drain current at appropriate gate voltage near Dirac point. Ambipolar transport due to field effect is only observed in GO dominated nanocomposites where 1 vol% p-TiO2 and 99 vol% GO based FET exhibits best performance having 115% response in 100 ppm ethanol at 100 °C with VDS = 0.5 V, VGS = 0.7 V. The response is enlarged ~ 34 times at VGS = 0.7 V as compared to the VGS = 0 V extending the lower detection limit of ethanol up to 500 ppb.



中文翻译:

基于p -TiO 2 /GO 异质结的 VOC 传感器:一种在优化栅极电压下放大 FET 结构灵敏度的新方法

石墨烯/氧化石墨烯 (GO) 场效应晶体管 (FET) 被广泛研究用于主流电子产品。另一方面,GO 和 TiO 2纳米复合材料被广泛报道用于传感和能源应用。在目前的研究中,我们开发了基于p型 TiO 2 /GO 混合通道的背栅 FET 传感器,用于检测极低浓度的挥发性有机化合物 (VOC)。通过p -TiO 2 /GO 异质结对 VOC 的高表面反应性和在狄拉克点附近适当的栅极电压下有限的漏极电流,在低浓度 VOC 下实现了高灵敏度。由于场效应引起的双极输运仅在 GO 占主导地位的纳米复合材料中观察到,其中 1 vol% p-TiO 2和基于 99 vol% GO 的 FET 表现出最佳性能,在 100 °C 的 100 ppm 乙醇中具有 115% 的响应,V DS  = 0.5 V,V GS  = 0.7 V。响应在V GS  = 0.7 时放大了约 34 倍V 与V GS  = 0 V相比,将乙醇的检测下限扩展到 500 ppb。

更新日期:2021-06-17
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