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Characterization of the defect density states in MoOx for c-Si solar cell applications
Solid-State Electronics ( IF 1.7 ) Pub Date : 2021-06-12 , DOI: 10.1016/j.sse.2021.108135 D. Scirè , R. Macaluso , M. Mosca , S. Mirabella , A. Gulino , O. Isabella , M. Zeman , I. Crupi
中文翻译:
用于 c-Si 太阳能电池应用的MoO x 中缺陷密度状态的表征
更新日期:2021-06-13
Solid-State Electronics ( IF 1.7 ) Pub Date : 2021-06-12 , DOI: 10.1016/j.sse.2021.108135 D. Scirè , R. Macaluso , M. Mosca , S. Mirabella , A. Gulino , O. Isabella , M. Zeman , I. Crupi
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.
中文翻译:
用于 c-Si 太阳能电池应用的MoO x 中缺陷密度状态的表征
MoO x薄层已经通过热蒸发然后沉积后退火沉积。通过光热偏转光谱装置测量的吸收光谱解卷积提取MoO x膜的状态分布密度,包括小极化子贡献。结果显示子带缺陷分布集中在导带下方 1.1 eV;发现这种分布的幅度随着沉积后退火温度和薄膜厚度而增加。