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Current Annealing to Improve Drain Output Performance of β-Ga2O3 Field-Effect Transistor
Solid-State Electronics ( IF 1.7 ) Pub Date : 2021-06-12 , DOI: 10.1016/j.sse.2021.108134
Hagyoul Bae , Khwang-Sun Lee , Peide D. Ye , Jun-Young Park

Current annealing, which utilizes high level of drain current during device fabrication, is proposed. A semiconductor device β-Ga2O3 field-effect transistor is preferred as test vehicle because of its inherently high drain current. With just a few seconds of current annealing, drain output performance can be boosted more than 50 % without adding other processes. Both electrical measurements and numerical simulations are performed to investigate the annealing behavior. Especially, proposed substrate engineering to promote thermal isolation enables better power consumption during current annealing.



中文翻译:

电流退火以提高β -Ga 2 O 3场效应晶体管的漏极输出性能

提出了在器件制造期间利用高水平漏极电流的电流退火。半导体器件β- Ga 2 O 3场效应晶体管由于其固有的高漏电流而优选作为测试载体。只需几秒钟的电流退火,漏极输出性能就可以提高 50% 以上,而无需添加其他工艺。进行电气测量和数值模拟以研究退火行为。特别是,提议的基板工程以促进热隔离可以在电流退火期间实现更好的功耗。

更新日期:2021-06-13
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