The temperature fluctuation process on localized shear band is an important foundation of the chip formation mechanism in mesoscopic scale of time (700-70ms) and dimension (65-500um). An accurate transient temperature fluctuation modeling of localized shear band is proposed by using the classic method of moving heat source and thermal convection in mesoscopic scale. Where, chip geometry, time coefficient of the coupling effect from relative chip segment, temperature rise from different heat sources and thermal convection model for chip segmentation process are developed, respectively. A novel measuring method are applied for thermal distribution in shear band and its evolution in chip generation progression. The given experimental and numerical results can show that the proposed temperature model can get the efficient predictions of temperature and physical phenomena at various chip segmentation stage. Physical phenomena in chip formation process, such as instable chip flow, crack generated and propagation, from the viewpoint of temperature fluctuation and its instable evolution, and cutting force are addressed and analyzed. The innovative model can determine the temperature fluctuation and evolution, area of maximum temperature of shear band in chip segmentation process in mesoscale of time and dimension.

局部剪切带上的温度波动过程是细观时间尺度（700-70 ms）和尺寸（65-500 um）切屑形成机制的重要基础。）。利用热源移动和细观尺度热对流的经典方法，提出了一种精确的局部剪切带瞬态温度波动模型。其中，分别建立了芯片几何形状、相关芯片段耦合效应的时间系数、不同热源的温升和芯片分段过程的热对流模型。一种新的测量方法应用于剪切带中的热分布及其在切屑生成过程中的演变。给出的实验和数值结果表明，所提出的温度模型可以有效地预测不同芯片分割阶段的温度和物理现象。切屑形成过程中的物理现象，如不稳定的切屑流动，裂纹产生和扩展，从温度波动及其不稳定演变的角度，对切削力进行了处理和分析。创新模型可以确定切屑分割过程中的温度波动和演化，剪切带的最高温度区域在时间和维度的中尺度上。