Low-density electronic states in the energy gap of an amorphous In–Ga–Zn–O film control device performance. Herein, density of states (DOS) distribution from valence band to the in-gap states of 10¹⁴ cm⁻³ eV⁻¹ level was determined using high-sensitivity UV photoemission spectroscopy. Exponential tail states accompanying two energetically-localized states were directly observed as reported previously. The observed slope of the exponential tail state was different from the Urbach energy derived using photothermal deflection spectroscopy, indicating the importance of directly observing the DOS of in-gap states.

中文翻译：

---

使用低能光子通过高灵敏度紫外光发射光谱研究非晶 In-Ga-Zn-O 薄膜的带隙状态

非晶 In-Ga-Zn-O 薄膜能隙中的低密度电子态控制器件性能。在此，使用高灵敏度紫外光发射光谱确定从价带到10 ¹⁴ cm ^-3 eV ^-1能级的带内态的态密度（DOS）分布。如先前报道的那样，直接观察到伴随两个能量局域态的指数尾态。观察到的指数尾态的斜率与使用光热偏转光谱得出的 Urbach 能量不同，表明直接观察带隙状态的 DOS 的重要性。