Copper-bearing wastewater from chemical mechanical planarization (CMP) is a typical semiconductor development byproduct. How to effectively treat Cu²⁺ in the CMP wastewater is a great concern in the microchip manufacturing industry. In this study, we investigated the potential for the microbial removal of Cu²⁺ by a multiple heavy metal-resistant bacterium Cupriavidus gilardii CR3. The environmental factors, including pH, nano-SiO₂, ionic strengths, and initial concentrations of Cu²⁺, and adsorption times on the bioremoval of Cu²⁺ in CMP wastewater were optimized. Under optimal condition, the maximum biosorption capacity for Cu²⁺ was 18.25 mg g⁻¹ and the bioremoval rate was 95.2%. The Freundlich model is described well for the biosorption of Cu²⁺ in CMP wastewater in the presence of nano-SiO₂ (R² = 0.99). The biosorption process obeyed the pseudo-second-order kinetic equation (R² > 0.99). In the column experiment, the advection–dispersion–retention model fitted the breakthrough curve of all experiments well (R² > 0.95). The attachment coefficient in the sand matrix coated by CR3 biofilm was 2.24–2.80 times as that in clean sand. Overall, C. gilardii CR3 is a promising candidate to remove Cu²⁺ from CMP wastewater. Nano-SiO₂ in CMP wastewater did not inhibit the bioremoval of Cu²⁺ but showed a slight promotion effect instead.

来自化学机械平坦化 (CMP) 的含铜废水是典型的半导体开发副产品。如何有效处理CMP废水中的Cu ²⁺是微芯片制造行业非常关心的问题。在这项研究中，我们研究了多重重金属抗性细菌Cupriavidus gilardii CR3微生物去除 Cu ²⁺的潜力。优化了环境因素，包括pH、纳米SiO ₂、离子强度和Cu ^{2+ 的}初始浓度，以及对CMP 废水中Cu ²⁺生物去除的吸附时间。在最佳条件下，对Cu ²⁺的最大吸附量为18.25 mg g^-1，生物去除率为95.2%。Freundlich 模型很好地描述了在纳米 SiO ₂ ( R ² = 0.99)存在下 CMP 废水中Cu ²⁺的生物吸附。吸附过程服从准二级动力学方程（R ² > 0.99）。在柱实验中，对流-弥散-滞留模型很好地拟合了所有实验的突破曲线（R ² > 0.95）。CR3 生物膜覆盖的砂基体中的附着系数是清洁砂的 2.24-2.80 倍。总体而言，C. gilardii CR3 是从 CMP 废水中去除 Cu ²⁺的有希望的候选者。纳米SiO ₂CMP废水中的Cu ²⁺没有抑制Cu ²⁺的生物去除，反而表现出轻微的促进作用。