The purpose of this study is to directly measure and determine the Si/SiO2/AlOxNy interface state density on metal insulator semiconductor field effect transistor (MISFET) structures. The primary advantage of using aluminum oxynitride (AlOxNy) is the perfectly controlled variability of the properties of these layers depending on their stoichiometry, which can be easily controlled by the parameters of the magnetron sputtering process. Therefore, a continuous spectrum of properties can be achieved from the specific values for oxide to the specific ones for nitride, thus opening a wide range of applications in high power, high temperature and high frequency electronics, optics and sensors and even acoustic devices.,The basic subject of this study is n-channel transistors manufactured using silicon with 50-nm-thick AlOxNy films deposited on a silicon dioxide buffer layer via magnetron sputtering in which the gate dielectric was etched with wet solutions and/or dry plasma mixtures. Furthermore, the output, transfer and charge pumping (CP) characteristics were measured and compared for all modifications of the etching process.,An electrical measurement of MISFETs with AlOxNy gate dielectrics was conducted to plot the current-voltage and CP characteristics and examine the influence of the etching method on MISFET parameters.,In this report, a flat band and threshold voltage and the density of interface traps were determined to evaluate and improve an AlOxNy-based MISFET performance toward highly sensitive field effect transistors for hydrogen detection by applying a Pd-based nanocrystalline layer. The sensitivity of the detectors was highly correlated with the quality of the etching process of the gate dielectrics.

中文翻译：

---

以薄 AlOxNy 薄膜作为栅极电介质的场效应晶体管

本研究的目的是直接测量和确定金属绝缘体半导体场效应晶体管 (MISFET) 结构上的 Si/SiO2/AlOxNy 界面态密度。使用氧氮化铝 (AlOxNy) 的主要优点是这些层的特性的完全受控可变性取决于它们的化学计量，这可以通过磁控溅射工艺的参数轻松控制。因此，可以实现从氧化物的特定值到氮化物的特定值的连续性能谱，从而在高功率、高温和高频电子、光学和传感器甚至声学设备中开辟了广泛的应用范围。本研究的基本主题是使用硅制造的 n 沟道晶体管，通过磁控溅射将 50 纳米厚的 AlOxNy 薄膜沉积在二氧化硅缓冲层上，其中用湿溶液和/或干等离子体混合物蚀刻栅极电介质。此外，测量并比较了蚀刻工艺的所有修改的输出、传输和电荷泵 (CP) 特性。对具有 AlOxNy 栅极电介质的 MISFET 进行电气测量以绘制电流-电压和 CP 特性并检查影响MISFET 参数的蚀刻方法。,在本报告中，确定了平带和阈值电压以及界面陷阱的密度，以评估和改进基于 AlOxNy 的 MISFET 性能，以通过应用 Pd 基纳米晶层来实现用于氢检测的高灵敏度场效应晶体管。检测器的灵敏度与栅极电介质的蚀刻工艺质量高度相关。