The purpose of this paper is to investigate the structure and electrical properties of eutectic Sb7.4Te92.6 as made thin films to evaluate their potentiality for application to non-volatile phase-change memories.,The films were prepared by the pulsed laser deposition technique. The films were characterized by using X-ray diffraction in grazing-incident geometry, differential scanning calorimetry, Raman spectroscopy and transversal current–voltage curves.,The memory effect state, characteristic of a typical phase-change memory material, was observed. The temperature of crystallization was about 100oC.,Further studies on endurance, scaling and SET/RESET operations are needed.,One of the main characteristic values, the hold voltage and the threshold voltage values, were about 0.85 and 1.2 V, respectively, in a line with those of Ge2Sb2Te5, GeTe and Sb2Te being considered to date as the main compounds for phase-change memory devices.,The conduction mechanism in the amorphous regime is highly agreed with the Poole–Frenkel effect in deep traps.

中文翻译：

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用于非易失性相变存储器的共晶 Sb7.4Te92.6 薄膜

本文的目的是研究共晶 Sb7.4Te92.6 制成的薄膜的结构和电学性能，以评估它们在非易失性相变存储器中的应用潜力。这些薄膜是通过脉冲激光沉积技术制备的。 . 通过在掠入射几何、差示扫描量热法、拉曼光谱和横向电流-电压曲线中使用 X 射线衍射对薄膜进行表征。观察到典型相变存储材料的记忆效应状态。结晶温度约为 100oC。需要进一步研究耐久性、缩放和 SET/RESET 操作。主要特征值之一，保持电压和阈值电压值，分别约为 0.85 和 1.2 V，在与 Ge2Sb2Te5 一致，