Abstract

The magnetic susceptibility of the V₃Si vanadium silicide synthesized from high-purity starting materials is measured in a 20−300 К temperature range. The dependence of the magnetic susceptibility of single-crystal on its orientation relative to the magnetic field is studied at room temperature, and the anisotropy of the magnetic susceptibility is found. Anomalies of different properties, which are observed in the 65–75 К temperature range, and the existence of anisotropy of the magnetic susceptibility are compared with those for pure vanadium; the genetic relationship (hereditivity) of many characteristics of the electronic structure of vanadium forming the silicide is noted.

中文翻译：

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V3Si硅化物磁化率的各向异性

摘要

由高纯度起始材料合成的 V ₃ Si 钒硅化物的磁化率在 20-300 К 温度范围内测量。在室温下研究了单晶的磁化率与其相对于磁场的取向的依赖性，并发现了磁化率的各向异性。在65-75 К温度范围内观察到的不同性质的异常，以及与纯钒的磁化率各向异性的存在进行比较；注意到形成硅化物的钒的电子结构的许多特征的亲缘关系（遗传性）。