In this paper, α-Ga₂O₃ nanorod arrays (NRAs) with preferential growth along the (110) direction were successfully prepared on the FTO substrate by the water bath method. With the help of a scanning electron microscope (SEM), X-ray diffractometer (XRD), and Raman spectrometer (Raman), the crystal structure and morphology characteristics of α-Ga₂O₃ NRAs were studied. On this basis, a photoelectrochemical (PEC) solar-blind ultraviolet photodetector based on the α-Ga₂O₃ NRAs was fabricated, and the photoelectric performance of the device was analyzed in detail through the PEC test system, and the working mechanism of the device was further discussed. The results show that the prepared α-Ga₂O₃ NRAs have good crystal quality which is closely arranged on the substrate and a quadrangular prism shape from the top view. The constructed α-Ga₂O₃ NRAs PEC photodetector shows typical solar-blind ultraviolet response characteristics and stable self-powered ability. Meanwhile, the device exhibited a high photo-dark current ratio (PDCR), responsivity (R) and detectivity (D*) of 1.01×10³, 11.34 mA/W and 2.68×10¹¹ Jones, respectively, as well as superior wavelength selectivity and fast response. This work confirms that α-Ga₂O₃ NRAs prepared by the water bath method have potential application prospects in highly sensitive and fast response PEC self-powered solar-blind ultraviolet photodetectors.

中文翻译：

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水浴法制备的基于α- Ga ₂ O ₃纳米棒阵列的自供电日盲紫外光电探测器

本文采用水浴法在FTO衬底上成功制备了沿（110）方向优先生长的α- Ga ₂ O ₃纳米棒阵列（NRA）。借助扫描电子显微镜（SEM）、X射线衍射仪（XRD）和拉曼光谱仪（Raman），研究了α- Ga ₂ O ₃ NRA的晶体结构和形貌特征。在此基础上，基于α- Ga ₂ O ₃的光电化学（PEC）日盲紫外光电探测器制作了NRA，并通过PEC测试系统详细分析了器件的光电性能，并进一步讨论了器件的工作机理。结果表明，制备的α- Ga ₂ O ₃ NRA具有良好的晶体质量，在衬底上排列紧密，俯视呈四棱柱状。构建的α- Ga ₂ O ₃ NRAs PEC光电探测器表现出典型的日盲紫外响应特性和稳定的自供电能力。同时，该器件表现出1.01×10 ³、11.34 mA/W和2.68×10 ¹¹的高光暗电流比（PDCR）、响应度（R）和探测度（D*）Jones 以及卓越的波长选择性和快速响应。这项工作证实了水浴法制备的α- Ga ₂ O ₃ NRAs在高灵敏度和快速响应的PEC自供电日盲紫外光电探测器中具有潜在的应用前景。