Abstract Thermal energy transfer in combined thin films consisting of silicon and diamond is considered. The combined films are thermally disturbed by a temperature oscillation at the silicon left edge and the influence of pulse length of temperature oscillation on energy transport characteristics is investigated. A nano-size gap with varying length is adopted at the films interface. The Boltzmann equation is adopted for the predictions of phonon intensity in the combined structure. The cut-off mismatch model is accommodated formulating interface conditions. The contribution of the near field radiation, due to evanescent waves, is also included at the interface. Equivalent equilibrium temperature is used quantifying phonon intensity distribution in the combined structure. It is found that the influence of the temperature oscillation on the phonon transport is significant at the silicon interface, i. e., increasing pulse length reduces phonon intensity at the silicon interface. Temporal behavior of equivalent equilibrium temperature is similar to the temperature oscillation introduced at the left edge of the silicon. The rise in temperature in the combined film is faster in the beginning of the heating cycle.

中文翻译：

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跨复合薄膜的热能传输：热特性

摘要 考虑了由硅和金刚石组成的复合薄膜中的热能传递。复合薄膜受到硅左边缘温度振荡的热扰动，研究了温度振荡的脉冲长度对能量传输特性的影响。在薄膜界面处采用不同长度的纳米级间隙。采用玻尔兹曼方程来预测组合结构中的声子强度。截止失配模型适用于制定界面条件。由于倏逝波，近场辐射的贡献也包括在界面处。等效平衡温度用于量化组合结构中的声子强度分布。发现温度振荡对声子传输的影响在硅界面处显着，即。例如，增加脉冲长度会降低硅界面处的声子强度。等效平衡温度的时间行为类似于在硅的左边缘引入的温度振荡。在加热循环开始时，组合膜中的温度上升更快。