The reflection and refraction of electrons across a two-dimensional metal-semiconductor tunnel junction are studied incorporating both Rashba and Dresselhaus spin-orbit interactions for the semiconductor region. The effects of incident electron energy, angle of incidence and spin-orbit interactions on the angles of refraction of the spin-up and spin-down electrons are calculated exactly. It is shown that the Dresselhaus interaction decreases the angle of refraction for the spin-down electrons more than the spin-up electrons causing a larger splitting between the spin-up and spin-down electrons. Also an increase in the incident energy is shown to increase the spin-filtering effect. The refraction coefficients, spin-up and spin-down current densities and tunnelling conductance are also studied with respect to spin-orbit interactions. Finally, the spin polarization current is determined in the semiconductor region in the presence of Rashba interaction alone and in the presence of both Rashba and Dresselhaus interactions.

结合半导体区域的 Rashba 和 Dresselhaus 自旋轨道相互作用，研究了电子穿过二维金属-半导体隧道结的反射和折射。精确计算了入射电子能量、入射角和自旋轨道相互作用对自旋向上和自旋向下电子折射角的影响。结果表明，与自旋向上电子相比，德雷塞尔豪斯相互作用使自旋向下电子的折射角减小得更多，从而导致自旋向上和自旋向下电子之间发生更大的分裂。还显示入射能量的增加会增加自旋过滤效应。还研究了自旋轨道相互作用的折射系数、自旋向上和自旋向下电流密度以及隧道电导。最后，