Poisson-Schrödinger (PS) simulations and an analytical charge model for a back biased FDSOI structure operated at deep cryogenic temperatures have been developed. PS simulations have been conducted down to 0 K, where metallic statistics applies, by replacing the F₀ Fermi integral by a Heaviside function. Considering, as a first approximation, two separated channels for front and back interface, a set of implicit equations has been established based on a single subband scheme within the Airy approach, providing a good description of surface potential, inversion charge and capacitance characteristics of FDSOI structures operated at very low temperature and for various back biases and silicon thicknesses. This analytical charge model is a first step towards a compact model of FDSOI MOSFET for circuit design at cryogenic condition.

泊松-薛定谔 (PS) 模拟和用于在深低温下运行的反向偏置 FDSOI 结构的分析电荷模型已经开发出来。PS 模拟已经进行到 0 K，其中金属统计适用，通过替换 F ₀基于 Heaviside 函数的费米积分。考虑到作为第一近似值，前后界面有两个分离的通道，基于 Airy 方法中的单个子带方案建立了一组隐式方程，很好地描述了 FDSOI 的表面电位、反转电荷和电容特性结构在非常低的温度下工作，并适用于各种背偏压和硅厚度。该分析电荷模型是实现用于低温条件下电路设计的 FDSOI MOSFET 紧凑模型的第一步。