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Silicon/2D-material photodetectors: from near-infrared to mid-infrared
Light: Science & Applications ( IF 19.4 ) Pub Date : 2021-06-09 , DOI: 10.1038/s41377-021-00551-4
Chaoyue Liu 1 , Jingshu Guo 1 , Laiwen Yu 1 , Jiang Li 1 , Ming Zhang 1, 2 , Huan Li 1 , Yaocheng Shi 1, 2 , Daoxin Dai 1, 2
Affiliation  

Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.



中文翻译:

硅/二维材料光电探测器:从近红外到中红外

二维材料 (2DM) 因其在灵活集成和超宽工作波长范围方面的优势而被广泛用于构建光电探测器 (PD)。具体而言,由于硅微电子学和硅光子学已成功开发用于许多应用,硅上的 2DM PD 备受关注。2DM PD 满足了硅光子学对低成本、高性能和宽带光电探测的迫切需求。在这项工作中,回顾了工作在从近红外到中红外波段的 Si/2DM PD 的最新进展,这些波段对许多应用具有吸引力。第一部分总结了操作机制和设备配置。然后分别详细回顾了波导集成 PD 和表面照明 PD。

更新日期:2021-06-09
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