The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows forming heterojunctions with small chain stress. The insulation nature of the former and the quasi-metallic property of the latter make them attractive for flat optoelectronics. Recently, shapes of graphene and h-BN domains were precisely controlled, creating sharp graphene/h-BN interfaces. Here, we investigated the electronic and structural properties of graphene (h-BN) nanoribbon domains of different sizes sandwiched between h-BN (graphene) nanoribbons forming in-plane heterojunctions. Different domain sizes for the non-passivated zigzag edge termination were studied. Results showed that the charge density is localized in the edge of the heterojunctions, regardless of the domain size. The systems with graphene domains are metallic, presenting null band gaps. The ones with the h-BN island are small-bandgap semiconductors with the highest bandgap value around 0.2eV. The calculated bandgap has the same magnitude of the certain threshold for density functional theory. As a general trend, these materials exhibit a ferromagnetic behavior, which can be useful for magnetic applications at the nanoscale.

六方氮化硼 (h-BN) 和石墨烯纳米带之间的结构相似性允许形成具有小链应力的异质结。前者的绝缘性质和后者的准金属特性使它们对平面光电子学具有吸引力。最近，石墨烯和 h-BN 域的形状得到了精确控制，从而形成了清晰的石墨烯 / h-BN 界面。在这里，我们研究了夹在 h-BN（石墨烯）纳米带之间形成面内异质结的不同尺寸的石墨烯（h-BN）纳米带域的电子和结构特性。研究了非钝化锯齿形边缘终端的不同域大小。结果表明，无论域大小如何，电荷密度都集中在异质结的边缘。具有石墨烯畴的系统是金属的，呈现零带隙。带有 h-BN 岛的是小带隙半导体，带隙值最高在 0.2eV 左右。计算的带隙与密度泛函理论的某个阈值具有相同的幅度。作为一般趋势，这些材料表现出铁磁行为，可用于纳米级的磁性应用。