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Processing Stability of Monolayer WS2 on SiO2
Nano Express Pub Date : 2021-05-24 , DOI: 10.1088/2632-959x/ac022b
G Delie 1 , D Chiappe 2 , I Asselberghs 2 , C Huyghebaert 2 , I Radu 2 , S Banerjee 2 , B Groven 2 , S Brems 2 , V V Afanas’ev 1
Affiliation  

Using internal photoemission of electrons, the energy position of the valence band top edge in 1 monolayer WS2 films on top of SiO2 thermally-grown on Si was monitored to evaluate the stability of the WS2 layer with respect to two critically important technological factors: exposure to air and the transfer of WS2 from the growth substrate (sapphire) onto SiO2. Contrary to previous results obtained for WS2 and MoS2 layers synthesized by metal film thermal sulfurization in H2S, the valence band top of metal-organic chemical vapor deposition grown WS2 is found to remain at 3.7 0.1 eV below the conduction band bottom edge of SiO2 through different growth runs, transfer processing, and storage in air for several months. This exceptional stability indicates WS2 as a viable candidate for the wafer-scale technology implementation.



中文翻译:

单层WS 2在SiO 2上的加工稳定性

使用电子的内部光电发射,监测在 Si 上热生长的 SiO 2顶部的1 单层 WS 2膜中价带顶部边缘的能量位置,以评估 WS 2层在两个至关重要的技术因素方面的稳定性: 暴露在空气中和 WS 2从生长衬底(蓝宝石)转移到 SiO 2 上。与之前通过金属膜在 H 2 S 中热硫化合成的WS 2和 MoS 2层获得的结果相反,金属有机化学气相沉积生长的 WS 2的价带顶通过不同的生长运行、转移处理和在空气中储存数月,发现 SiO 2的导带底边缘以下保持在 3.7±0.1 eV 。这种出色的稳定性表明 WS 2是晶圆级技术实施的可行候选者。

更新日期:2021-05-24
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