The growth of nanowires (NWs) with uniform sizes is crucial for future NW-based electronics. In this work, an efficient one-step process is introduced for the growth of uniform gallium arsenide NWs on the native oxide surface of Si, which could be even considered as an alternative for expensive and sophisticated patterning approaches. The proposed strategy considers a Ga pre-deposition step leading to the formation of droplets with homogeneous sizes. That is followed by controlled nucleation of gallium arsenide from those droplets only. Our key to controlling the nucleation of gallium arsenide is to perform the NW growth at temperatures above 580 10 C and low Ga fluxes. By this method, the statistical distribution of the length and diameter of the vertically grown NWs decreased to about 3%–6% of their averaged values. Moreover, 100% epitaxial growth was realized. Besides, the growth of undesired parasitic islands is addressed and accordingly suppressed. Our study focuses on NW low growth rates, which is so far not investigated in the literature and, could be of great interest e.g. for in situ growth studies.

具有统一尺寸的纳米线 (NW) 的生长对于未来基于 NW 的电子产品至关重要。在这项工作中，引入了一种有效的一步法，用于在 Si 的天然氧化物表面上生长均匀的砷化镓 NW，这甚至可以被视为昂贵且复杂的图案化方法的替代方法。所提出的策略考虑了 Ga 预沉积步骤，导致形成具有均匀尺寸的液滴。然后仅从这些液滴中受控地使砷化镓成核。我们控制砷化镓成核的关键是在高于 580 10 C 的温度和低 Ga 通量下进行 NW 生长。通过这种方法，垂直生长的 NWs 的长度和直径的统计分布下降到它们平均值的 3%–6% 左右。而且，实现了 100% 的外延生长。此外，不需要的寄生岛的生长得到解决并因此被抑制。我们的研究侧重于西北低增长率，迄今为止文献中尚未对此进行研究，并且可能会引起人们极大的兴趣，例如原位生长研究。