Deep ultraviolet (DUV) AlGaN light-emitting diodes (LEDs) are promising alternatives for production of DUV light, offering many advantages over mercury arc lamps. In this work, AlGaN nanowires with an inverse taper profile were demonstrated through a wet etching process, enabling removal of the nanowires from the growth substrate in a novel peeling process to form flexible devices. AlGaN nanowires with taper angles of ∼22 were obtained following a 70 min etch in AZ400K. Nanowire taper angle was studied as a function of etch time and nanowire top diameter. Nanowires with inverse taper were then embedded in a flexible polymer layer and removed from their growth substrate, which could enable development of high-efficiency flexible micro-LEDs. Released nanowires embedded within the polymer liftoff layer exhibit strain relaxation induced redshift due to reduction in piezoelectric polarization electric field intensity. The inverse taper structure was found to promote enhanced light extraction from the nanowire. The demonstrated flexible DUV emitters with inverse taper are shown to improve the device efficiency and allow for realization of flexible emitters through a novel fabrication process for the first time.

深紫外 (DUV) AlGaN 发光二极管 (LED) 是生产深紫外光的有前途的替代品，与汞弧光灯相比具有许多优势。在这项工作中，通过湿法蚀刻工艺展示了具有倒锥形轮廓的 AlGaN 纳米线，能够在新的剥离工艺中从生长衬底上去除纳米线以形成柔性器件。在 AZ400K 中蚀刻 70 分钟后获得锥角为 ~22 的 AlGaN 纳米线。纳米线锥角作为蚀刻时间和纳米线顶部直径的函数进行研究。然后将具有倒锥度的纳米线嵌入柔性聚合物层中并从其生长基板上移除，这可以开发高效的柔性微型 LED。由于压电极化电场强度的降低，嵌入聚合物剥离层中的释放纳米线表现出应变弛豫引起的红移。发现倒锥形结构促进从纳米线的增强的光提取。展示的具有倒锥度的柔性 DUV 发射器可提高器件效率，并首次通过新颖的制造工艺实现柔性发射器。