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The path towards 1 m monocrystalline Zn3P2 films on InP: substrate preparation, growth conditions and luminescence properties
Journal of Physics: Energy ( IF 6.9 ) Pub Date : 2021-05-20 , DOI: 10.1088/2515-7655/abf723
Mahdi Zamani 1 , Elias Stutz 1 , Simon Escobar 1 , Reza R Zamani 2 , Rajrupa Paul 1 , Jean-Baptiste Leran 1 , Mirjana Dimitrievska 1 , Anna Fontcuberta i Morral 1, 3
Affiliation  

Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide $\left( {{\text{Z}}{{\text{n}}_3}{{\text{P}}_2}} \right)$ films using molecular beam epitaxy with thicknesses up to 1 m thickness on InP (100) substrates, as demonstrated by high resolution transmission electron microscopy and x-ray diffraction. We explain the mechanisms by which thick monocrystalline layers can form. We correlate the crystalline quality with the optical properties by photoluminescence at 12 K. Polycrystalline and monocrystalline films exhibit dissimilar photoluminescence below the bandgap at 1.37 and 1.30 eV, respectively. Band edge luminescence at 1.5 eV is only detected for monocrystalline samples. This work establishes a reliable method for fabricating high-quality ${\text{Z}}{{\text{n}}_3}{{\text{P}}_2}$ thin films that can be employed in next generation photovoltaic applications.



中文翻译:

通往1的道路 InP 上的m 单晶 Zn 3 P 2薄膜:衬底制备、生长条件和发光特性

由地球丰富元素制成的半导体有望在未来大规模部署光伏技术中用作吸收体。本文报道了$\left( {{\text{Z}}{{\text{n}}_3}{{\text{P}}_2}} \right)$使用分子束外延法外延合成单晶磷化锌薄膜,厚度可达 1InP (100) 衬底上的 m 厚度,如高分辨率透射电子显微镜和 X 射线衍射所示。我们解释了形成厚单晶层的机制。我们通过 12 K 的光致发光将晶体质量与光学特性相关联。多晶和单晶薄膜分别在 1.37 和 1.30 eV 的带隙以下表现出不同的光致发光。仅对单晶样品检测到 1.5 eV 的带边发光。这项工作建立了一种可靠的方法来制造${\text{Z}}{{\text{n}}_3}{{\text{P}}_2}$可用于下一代光伏应用的高质量薄膜。

更新日期:2021-05-20
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