We investigate the electric response of chiral phonons on the low-buckled group-IVA monolayers by performing first-principles calculations. The vertical electric field breaks the degeneracy of phonon modes at high-symmetry K points of the phonon Brillouin zone, and the size of the phononic gap is proportional to the strength of the electric field. The gapped phonon modes at K possess chiralities with considerable phonon circular polarizations and discrete phonon pseudoangular momenta. The chiralities of phonons are robust against the variation of the field strength, but reversed by changing the field direction. Electric control of chiral phonons adds a new dimension to the study of chiral phonons, which has potential use in the design of phononic and valley devices.

我们通过执行第一性原理计算来研究手性声子在低屈曲组 IVA 单层上的电响应。垂直电场打破了声子布里渊区高对称K点声子模式的简并性，声子间隙的大小与电场强度成正比。K处的间隙声子模式具有相当大的声子圆极化和离散声子伪角动量的手性。声子的手性对场强的变化是稳健的，但通过改变场方向而逆转。手征声子的电控制为手征声子的研究增加了一个新的维度，在声子和谷器件的设计中具有潜在的用途。