Type-I heterostructure, in which electrons and holes are confined in same region, is widely used in light emitting diodes and semiconductor lasers. Type-II heterostructure is widely used in photovoltaic devices because of its excellent spatial separation property of electrons and holes. Can we integrate photovoltaic, photoelectric properties with luminescent property in one device? Here we report a van der Waals heterostructure formed by black phosphorus (BP) and SnS monolayers. It is expected to realize these functions in one device. By first-principles methods, the structural stability, electronic properties and optical properties are investigated. It was found that the BP/SnS bilayer is type-II heterostructure with an indirect bandgap of 0.56eV. The p-like character of the band edge in BP/SnS vdW heterostructure makes it to be an excellent optoelectronic material. The type-II stability of the system can be improved by applying a negative electric field. However, when the positive electric field is bigger than 0.1V ⁻¹, the system begins to transform from type-II to type I. Therefore, by adding a gate voltage the bandgap and band alignment of this system can be controlled. The photovoltaic and photoelectric properties can be integrated in one device based on this heterostructure.

I型异质结构，其中电子和空穴被限制在同一区域，广泛用于发光二极管和半导体激光器。II型异质结构因其优异的电子和空穴空间分离特性而广泛应用于光伏器件中。我们能否将光伏、光电特性与发光特性集成在一个设备中？在这里，我们报告了由黑磷 (BP) 和 SnS 单层形成的范德华异质结构。期望在一台设备中实现这些功能。通过第一性原理方法，研究了结构稳定性、电子性质和光学性质。发现 BP/SnS 双层是 II 型异质结构，间接带隙为 0.56eV。该pBP/SnS vdW 异质结构中的带边特性使其成为一种优良的光电材料。通过施加负电场可以提高系统的 II 型稳定性。然而，当正电场大于0.1V ^{-1 时}，系统开始从II型转变为I型。因此，通过增加栅极电压可以控制该系统的带隙和带对齐。基于这种异质结构，光伏和光电特性可以集成在一个器件中。