The hFE of a transistor, or commonly known as the hybrid parameter forward current gain, is one of the important factors that characterizes the working of a transistor in any circuit. So designing such an experiment with readily available materials would help STEM students gain more intuition about the working principle of transistors in general. In this experiment we had used an Arduino UNO microcontroller along with some resistors and by using Ohm’s law we were able to deduce a formula for the hFE (hybrid parameter current gain) of any npn transistor used in the circuit, just by measuring the voltages across the input and output resistors used along with the transistor in a common emitter configuration.

晶体管的 hFE，或通常称为混合参数正向电流增益，是表征晶体管在任何电路中工作的重要因素之一。因此，使用现成的材料设计这样的实验将有助于 STEM 学生对晶体管的一般工作原理有更多的直觉。在这个实验中，我们使用了 Arduino UNO 微控制器和一些电阻器，通过使用欧姆定律，我们能够推导出电路中使用的任何 npn 晶体管的 hFE（混合参数电流增益）公式，只需测量两端的电压在共发射极配置中与晶体管一起使用的输入和输出电阻器。