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Very large-scale gap distances of atmospheric pressure dielectric barrier glow discharge using semiconductor materials
EPL ( IF 1.8 ) Pub Date : 2021-05-14 , DOI: 10.1209/0295-5075/133/65001
Weiwei Wang , Xue Wang , Zhihui Fan , Feng Liu , Jingquan Wang , Zhi Zhao , Haiyan Han , Yanbin Huang

Very large-scale gap distances of atmospheric pressure dielectric barrier discharge (DBD) in glow mode are obtained through semiconductor materials. The maximum value of the gap distance is up to 70 mm. Based on the feature of the cathode sheath, Auger neutralization theory, the trapped electron and the accumulated charge in the DBD system, the secondary electron emission is one of the primary reasons for very large-scale gap distances of the DBD to produce glow discharge. Furthermore, the contribution of the effective capacitance, the gas voltage and the discharge power are also discussed. Significant for the research are the development and the practical applications of atmospheric pressure glow discharge in the DBD with very large-scale gap distances.



中文翻译:

使用半导体材料的大气压介质阻挡辉光放电的超大规模间隙距离

辉光模式下大气压介质阻挡放电(DBD)的超大间隙距离是通过半导体材料获得的。间隙距离的最大值可达 70 mm。基于阴极鞘的特性、俄歇中和理论、DBD系统中的俘获电子和累积电荷,二次电子发射是DBD超大间隙距离产生辉光放电的主要原因之一。此外,还讨论了有效电容、气体电压和放电功率的贡献。对研究意义重大的是大气压辉光放电在具有非常大的间隙距离的 DBD 中的开发和实际应用。

更新日期:2021-05-14
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