Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status, which offers another degree of freedom in infrared remote sensing. However, to scale up by monolithically integrating grating-based polarizers onto a focal plane array (FPA) of infrared detectors, fundamental technical obstacles must be overcome, including reductions of the extinction ratio by the misalignment between the polarizer and the detector, grating line width fluctuations, the line edge roughness, etc. This paper reports the authors’ latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide (InGaAs/InP) sensors as the basic building blocks. Polarimetric and photovoltaic chips with divisions of the focal plane of 540 4 pixels and 320 256 superpixels have been successfully manufactured. Polarimetric imaging with enhanced contrast has been demonstrated. The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.

偏振成像通过检测物体的特定偏振状态，增强了从明亮背景中区分物体的能力，这为红外遥感提供了另一个自由度。然而，要通过将基于光栅的偏振器单片集成到红外探测器的焦平面阵列 (FPA) 来扩大规模，必须克服基本的技术障碍，包括由于偏振器和探测器之间的未对准而降低消光比、光栅线宽波动，线边缘粗糙度等。 本文报告了作者通过解决将大尺寸偏光片集成到具有单独的砷化铟镓/磷化铟（InGaAs/ InP) 传感器作为基本构建块。焦平面划分为540 4 个像素和320 256 个超像素的偏光芯片和光伏芯片已成功制造。已经证明了具有增强对比度的偏振成像。这项工作取得的进展为红外波长高质量偏振成像的工业化开辟了广阔的道路。