In this paper, lead sulfide (PbS) and multi-walled carbon nanotube (MWCNT) based field effect transistors (FETs) have been fabricated by using simple and low cost solution processing. The fabricated devices having channel length of 3 mm have been functionalized as a n-channel FETs. It has been observed from the output and the transfer characterstics that at the gate-to-source voltage (V _GS) of 15 V and drain-to-source voltage (V _DS) of 10 V, the on-state-drive current (I _ON) for PbS and MWCNT based FETs is 42.23 μA and 25.52 μA, respectively, whereas at V _GS=0 V and V _DS=10 V the off-state leakage current (I _OFF) is 0.183 μA and 0.11 μA, respectively. Further, for PbS and MWCNT based FETs at the measured threshold voltage of 5.75 V and 6.3 V, the sub-threshold swing is found to be 5.23 V/Decade and 6.12 V/Decade, respectively. The morphological and structural studies have been performed to speculate the crystallinity and the topography of the individual layers. The chemical composition of the different layers clearly justify the deposition of the material layers in the fabricated FETs. In addtion, this work also proposes a new approach for fabricating the PbS and MWCNT based FETs.

在本文中，硫化铅 (PbS) 和多壁碳纳米管 (MWCNT) 基场效应晶体管 (FET) 已通过使用简单且低成本的溶液加工制造。制造的具有 3 mm 沟道长度的器件已被功能化为 n 沟道 FET。从输出和传输特性可以看出，在15 V的栅源电压 ( V _GS ) 和 10 V 的漏源电压 ( V _DS ) 下，导通驱动电流 ( I _ON ) 对于基于 PbS 和 MWCNT 的 FET 分别为 42.23 μ A 和 25.52 μ A，而在V _GS = 0 V 和V _{DS 时}=10 V 时，断态漏电流 ( I _OFF ) 分别为 0.183 μ A 和 0.11 μ A。此外，对于在 5.75 V 和 6.3 V 的测量阈值电压下基于 PbS 和 MWCNT 的 FET，发现亚阈值摆幅分别为 5.23 V/Decade 和 6.12 V/Decade。已经进行了形态学和结构研究，以推测各个层的结晶度和形貌。不同层的化学成分清楚地证明材料层在制造的 FET 中的沉积是合理的。此外，这项工作还提出了一种制造基于 PbS 和 MWCNT 的 FET 的新方法。