We report an experimental study of electron transport properties of MnSe/(Bi,Sb)₂Te₃ heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)₂Te₃ is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 e ²/h at temperature T = 1.6 K and magnetic field μ ₀ H = 5 T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.

_{我们报告了 MnSe/(Bi,Sb) 2} Te ₃异质结构的电子传输特性的实验研究，其中 MnSe 是一种反铁磁绝缘体，而 (Bi,Sb) ₂ Te ₃是一种三维拓扑绝缘体 (TI)。霍尔效应和纵向电阻的测量表现出强磁邻近效应。我们的分析表明，栅极电压可以显着改变异常霍尔电导，在温度T = 1.6 K 和磁场μ ₀ H时超过 0.1 e ² / h = 5 T，即使只有顶部 TI 表面靠近 MnSe。这项工作表明，基于反铁磁绝缘体的异质结构为研究广泛的拓扑自旋电子现象提供了一个有前景的平台。