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Superconducting nanowire single-photon detector made of ultrathin γ-Nb4N3 film for mid-infrared wavelengths
Superconductor Science and Technology ( IF 3.6 ) Pub Date : 2021-05-18 , DOI: 10.1088/1361-6668/abf851
Yiming Pan 1, 2, 3 , Hui Zhou 1, 3 , Lu Zhang 1, 3 , Hao Li 1, 2, 3 , Yan Tang 1, 2, 3 , Huiqin Yu 1, 3 , Mengting Si 1, 2, 3 , Lixing You 1, 2, 3 , Zhen Wang 1, 2, 3
Affiliation  

Superconducting nanowire single-photon detectors (SNSPDs) made of ultrathin δ-NbN films have been widely applied in both visible and infrared wavelengths. For mid-infrared (MIR) wavelengths, SNSPDs made of tungsten silicide films with a lower critical temperature were reported up to 9.9 μm wavelength. In this study, we demonstrate the potential of NbN-SNSPDs for use in MIR applications. SNSPDs made of γ-Nb4N3 films (critical temperature of 5.1 K for 6.5 nm thick films) instead of δ-NbN films were fabricated. The dependence of the normalized detection efficiency on the bias current indicated a clear trend toward a saturated plateau for wavelengths up to 2145 nm. The calculated cut-off wavelengths indicated the possibility of using γ-Nb4N3 SNSPDs for longer MIR wavelengths.



中文翻译:

由超薄γ- Nb 4 N 3薄膜制成的超导纳米线单光子探测器,用于中红外波长

由超薄δ- NbN薄膜制成的超导纳米线单光子探测器(SNSPD)已广泛应用于可见光和红外波长。对于中红外 (MIR) 波长,据报道,由具有较低临界温度的硅化钨薄膜制成的 SNSPD 的波长可达 9.9 μm。在这项研究中,我们展示了 NbN-SNSPD 在 MIR 应用中的潜力。由γ -Nb 4 N 3薄膜(6.5 nm 厚薄膜的临界温度为 5.1 K)代替δ制成的SNSPD-NbN 薄膜被制作出来。归一化检测效率对偏置电流的依赖性表明,对于高达 2145 nm 的波长,有明显趋于饱和的趋势。计算出的截止波长表明使用γ -Nb 4 N 3 SNSPDs 用于更长的 MIR 波长的可能性。

更新日期:2021-05-18
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