Herein, high-quality n-ZnO film layer on c-sapphire and well-crystallized tetragonal p-BiOCl nanoflakes on Cu foil are prepared, respectively. According to the absorption spectra, the bandgaps of n-ZnO and p-BiOCl are confirmed as ~3.3 and ~3.5 eV, respectively. Subsequently, a p-BiOCl/n-ZnO heterostructural photodetector is constructed after a facile mechanical bonding and post annealing process. At –5 V bias, the photocurrent of the device under 350 nm irradiation is ~800 times higher than that in dark, which indicates its strong UV light response characteristic. However, the on/off ratio of In–ZnO–In photodetector is ~20 and the Cu–BiOCl–Cu photodetector depicts very weak UV light response. The heterostructure device also shows a short decay time of 0.95 s, which is much shorter than those of the devices fabricated from pure ZnO thin film and BiOCl nanoflakes. The p-BiOCl/n-ZnO heterojunction photodetector provides a promising pathway to multifunctional UV photodetectors with fast response, high signal-to-noise ratio, and high selectivity.

在此， c上的高质量 n-ZnO 薄膜层分别制备了Cu箔上的蓝宝石和结晶良好的四方p-BiOCl纳米薄片。根据吸收光谱，n-ZnO 和 p-BiOCl 的带隙分别被确认为~3.3 和~3.5 eV。随后，经过简单的机械键合和后退火工艺，构建了 p-BiOCl/n-ZnO 异质结构光电探测器。在 –5 V 偏压下，器件在 350 nm 照射下的光电流是暗光下的约 800 倍，这表明其具有很强的紫外光响应特性。然而，In-ZnO-In 光电探测器的开/关比约为 20，而 Cu-BiOCl-Cu 光电探测器描绘出非常弱的紫外光响应。异质结构器件还显示出 0.95 s 的短衰减时间，这比由纯 ZnO 薄膜和 BiOCl 纳米薄片制造的器件短得多。