In this paper, we discuss low-temperature hopping-conductivity behavior in the insulating phase, in the absence of a magnetic field. We conduct a theoretical study of the crossover from hopping to activated transport in a GaAs two-dimensional hole system at low temperatures, finding that a crossover takes place from the Efros-Shklovskii variable-range hopping (VRH) regime to an activated regime in this system. This conductivity behavior in p-GaAs quantum wells is qualitatively consistent with the laws laid down in theories of localized electron interactions. Given sufficiently strong interactions, the holes in the localized states are able to hop collectively.

在本文中，我们讨论了在没有磁场的情况下绝缘相中的低温跳跃导电行为。我们对低温下 GaAs 二维空穴系统中从跳跃到激活传输的交叉进行了理论研究，发现从 Efros-Shklovskii 可变范围跳跃 (VRH) 机制到激活机制的交叉发生在这个系统。p-GaAs 量子阱中的这种导电行为与定域电子相互作用理论中规定的定律在性质上是一致的。给定足够强的相互作用，局部状态中的空穴能够集体跳跃。