Using an 8-band model it is demonstrated through the combination of strain and piezoelectricity that increasing the InN quantum-well thickness of a GaN-InN-GaN device changes the InN material from a positive bandgap semiconductor to a topological insulator (negative bandgap). Moderate strain tuning of a four monolayer InN layer for a GaN-InN-GaN device reveals a giant (one order of magnitude) tuning of current–voltage characteristics. It is verified that piezoelectricity plays an important role in controlling electron transport through the InN layer.

中文翻译：

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GaN/InN/GaN 量子阱器件中的压电可调性和拓扑绝缘体跃迁

使用 8 能带模型，通过应变和压电性的组合证明，增加 GaN-InN-GaN 器件的 InN 量子阱厚度会将 InN 材料从正带隙半导体改变为拓扑绝缘体（负带隙）。GaN-InN-GaN 器件的四单层 InN 层的适度应变调谐揭示了电流-电压特性的巨大（一个数量级）调谐。经证实，压电在控制通过 InN 层的电子传输方面起着重要作用。