We developed SrSiO₃:Ce crystals with different dopant concentrations of 0.5%, 1.0% and 2.0% using the floating zone method and investigated the scintillation and storage luminescence properties. Under X-ray irradiation, a broad emission band peaking at around 360nm was observed in all the samples. The decay time constants were in the range of 33–34ns, which were typical values for the 5d–4f transitions of Ce³⁺. The 1.0% and 2.0% Ce-doped samples showed a photoabsorption peak under ²⁴¹Am 59.5keV γ-rays and the light yield was 1200 and 1400phMeV⁻¹, respectively. The results of pulse-height spectra and thermally-stimulated luminescence showed a complementary relationship between scintillation and ionizing-radiation-induced storage luminescence properties in Ce-doped SrSiO₃.

我们使用浮区法开发了具有 0.5%、1.0% 和 2.0% 不同掺杂浓度的SrSiO ₃ :Ce 晶体，并研究了闪烁和存储发光特性。在 X 射线照射下，所有样品均观察到在 360nm 附近达到峰值的宽发射带。衰减时间常数在 33-34ns 的范围内，这是 Ce ³⁺的 5d-4f 跃迁的典型值。1.0% 和 2.0% Ce 掺杂的样品在²⁴¹ Am 59.5keV γ射线下显示出光吸收峰，光产额分别为 1200 和 1400phMeV ^-1， 分别。脉冲高度光谱和热激励发光的结果表明，Ce 掺杂的 SrSiO _{3 中的}闪烁和电离辐射诱导的存储发光特性之间存在互补关系。