In₂O₃ films were deposited on c-plane sapphire substrates by using pulsed laser deposition (PLD) without and with oxygen plasma at various growth temperature. The crystal structure, optical properties and surface morphologies were determined by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometer and atomic force microscope. XRD analysis revealed that all films have the body-centered cubic structure with a preferable (222) orientation. The results of XRC, Raman spectroscopy and spectrophotometer prove the superiority of plasma-assisted PLD. The low temperature growth of crystal In₂O₃ film paves the way to be compatible with the established silicon microfabrication processes.

在不同生长温度下，使用脉冲激光沉积（PLD）在不使用和使用氧等离子体的情况下，将In ₂ O ₃膜沉积在c面蓝宝石衬底上。通过X射线衍射(XRD)、拉曼光谱、分光光度计和原子力显微镜测定晶体结构、光学性质和表面形貌。XRD 分析表明，所有薄膜都具有体心立方结构，具有优选的 (222) 取向。XRC、拉曼光谱和分光光度计的结果证明了等离子体辅助PLD的优越性。晶体 In ₂ O ₃薄膜的低温生长为与已建立的硅微制造工艺兼容铺平了道路。