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Composite-channel In0.17Al0.83N/In0.1Ga0.9N/GaN/Al0.04Ga0.96N high electron mobility transistors for RF applications
International Journal of RF and Microwave Computer-Aided Engineering ( IF 1.7 ) Pub Date : 2021-06-08 , DOI: 10.1002/mmce.22775
Revathy A. 1 , Boopathi C. S. 1
Affiliation  

In this work, we present the high performance of composite channel based In0.17Al0.83N/In0.1Ga0.9N/GaN/Al0.04Ga0.96N high electron mobility transistors (HEMTs) on a sapphire substrate. A numerical simulation is carried out for the proposed and conventional GaN channel-based HEMTs using TCAD. Due to the strong polarization of InAlN/InGaN, enhanced electron confinement and high electron mobility of composite channel based proposed device shows excellent DC and RF characteristics with improved linearity than conventional GaN channel based HEMTs. A 55 nm T-gate device demonstrates 4.45 A/mm drain current density (IDS) at VGS = 0 V, 0.7 S/mm stable transconductance (GM) for a wide range of gate bias, and excellent FT/Fmax of 274/288 GHz. Benefiting from the Al0.04Ga0.96N buffer (back-barrier), the device shows a very low sub-threshold drain leakage current and high breakdown voltage (VBR) of 43.5 V. The combination of high FT/Fmax, stable transconductance, and high breakdown voltage of the proposed HEMTs shows the great promise for high power and wide-bandwidth millimeter-wave applications.

中文翻译:

用于射频应用的复合通道 In0.17Al0.83N/In0.1Ga0.9N/GaN/Al0.04Ga0.96N 高电子迁移率晶体管

在这项工作中,我们展示了基于复合沟道的 In 0.17 Al 0.83 N/In 0.1 Ga 0.9 N/GaN/Al 0.04 Ga 0.96 N 高电子迁移率晶体管 (HEMT) 在蓝宝石衬底上的高性能。使用 TCAD 对提出的和传统的基于 GaN 通道的 HEMT 进行了数值模拟。由于 InAlN/InGaN 的强极化,基于复合通道的器件的增强电子限制和高电子迁移率显示出优异的 DC 和 RF 特性,与基于传统 GaN 通道的 HEMT 相比具有更高的线性度。55 nm T 型栅极器件在V GS 下表现出 4.45 A/mm 漏电流密度 (I DS ) = 0 V,0.7 S /毫米稳定跨导(G中号),用于宽范围的栅极偏压的,和优良的˚F Ť / ˚F最大288分之274千兆赫。得益于 Al 0.04 Ga 0.96 N 缓冲器(背势垒),该器件显示出非常低的亚阈值漏漏电流和43.5 V 的高击穿电压 ( V BR )。高F T / F max的组合,稳定所提出的 HEMT 的跨导和高击穿电压显示出高功率和宽带毫米波应用的巨大前景。
更新日期:2021-08-03
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