The reconfigurable field-effect transistor (RFET), is an electronic device whose conduction mechanism can be reversibly reconfigured between n-type and p-type operation modes. To enable this functionality, those devices do not rely on chemical doping caused by impurities but rather on electrostatic doping, i.e. the generation of mobile carriers via an external potential. This functionality has been first concieved in the early 2000s to reduce the source-drain leakage in ambipolar thin film transistors. Over the years many different concepts have been developed employing different conduction mechanisms as well as channel materials, such as silicon nanowires, carbon nanotubes or two-dimensional layered materials. In addition the focus the research shifted more and more towards the circuit level, bringing the unique device characteristics to fruitation. In this work, we will give an historic overview of the main development phases including thier key-achievements starting from the earlier years reaching untill today. Further, we discuss the most interesting circuit properties arising from the device functionality and summarize the broad range of their potential future applications.

可重构场效应晶体管 (RFET) 是一种电子器件，其导电机制可以在 n 型和 p 型工作模式之间可逆地重构。为了实现这一功能，这些器件不依赖于由杂质引起的化学掺杂，而是依赖于静电掺杂，即通过外部电位产生移动载流子。这种功能最早是在 2000 年代初构思出来的，目的是减少双极薄膜晶体管中的源漏泄漏。多年来，已经开发了许多不同的概念，采用不同的传导机制以及通道材料，例如硅纳米线、碳纳米管或二维分层材料。此外，研究的重点越来越转向电路层面，实现独特的设备特性。在这项工作中，我们将对主要发展阶段进行历史性概述，包括从早期到今天的主要成就。此外，我们讨论了由器件功能引起的最有趣的电路特性，并总结了它们未来潜在应用的广泛范围。