The aim of the present study was to assess the effect of cadmium (100 µM Cd) and/or silicon (5 mM Si) on the maize hybrid Reduta cultivated for 15 days in an isolated in vitro conditions. The growth parameters, Cd and Si accumulation, the expressions of the genes for Si transporters (ZmLsi1, ZmLsi2, and ZmLsi6), the root developmental changes and activities of antioxidant enzymes (guaiacol peroxidase, catalase, superoxide dismutase) were investigated. Silicon and/or Cd application altered the maize primary root development in terms of growth and apoplasmic barriers; lignification and suberisation of the exodermal and endodermal cell walls were enhanced both in Cd, Si, and CdSi treatment. The content of Cd which was predominantly accumulated in the roots decreased in the CdSi treated roots and in the 1st leaf in comparison with the Cd treatment. On the contrary, maize plants accumulated Si mostly in the leaves with no differences between the Si and CdSi treatment. The expression of the gene for Si influx transporter (ZmLsi1) was in the roots up-regulated due to Cd (Cd and CdSi treatment), but down-regulated in the Si treatment. The relative expression of the gene for Si efflux transporter (ZmLsi2) was regulated positively due to the Si, Cd and CdSi treatment with the peak in the CdSi treatment. A strong up-regulation of the ZmLsi6 which encodes the protein responsible for Si releasing into the leaves was in the 2nd leaf in the Si and Cd treatment.

本研究的目的是评估镉 (100 µM Cd) 和/或硅 (5 mM Si) 对在分离的体外条件下培养 15 天的玉米杂交 Reduta 的影响。生长参数、Cd 和 Si 积累、Si 转运蛋白基因的表达（ZmLsi1、ZmLsi2和ZmLsi6），研究了抗氧化酶（愈创木酚过氧化物酶、过氧化氢酶、超氧化物歧化酶）的根发育变化和活性。硅和/或镉的应用在生长和质外质屏障方面改变了玉米初生根的发育；外胚层和内胚层细胞壁的木质化和木栓化在 Cd、Si 和 CdSi 处理中均得到增强。与 Cd 处理相比，CdSi 处理的根和第 1 叶中主要积累在根中的 Cd 含量降低。相反，玉米植株主要在叶片中积累 Si，Si 和 CdSi 处理之间没有差异。Si流入转运蛋白（ZmLsi1）基因的表达) 在根中由于 Cd（Cd 和 CdSi 处理）而上调，但在 Si 处理中下调。由于Si、Cd和CdSi处理，Si外排转运蛋白( ZmLsi2 )基因的相对表达受到正调控，并在CdSi处理达到峰值。在 Si 和 Cd 处理的第 2 片叶子中，编码负责 Si 释放到叶子中的蛋白质的ZmLsi6 的强烈上调。