This work reports on charging damage induced by gate antennae in high- $\kappa $ (HK) Replacement Metal Gate (RMG) technology for the HK-first and HK-last integration flows, comparing plate and comb layouts. For the HK-first devices, a significant degradation of the Gate Induced Drain Leakage (GIDL) occurs for both types of antennae, which is analyzed in terms of activation energy and corresponding trap characteristics. The degradation of the HK-last transistors is attributed to top oxide deposition which causes a different degradation pattern. In this case, charging damage leads to a degradation of the gate leakage which correlates with the “aspect ratio” of the antenna. These differences are explained and analyzed based on the plasma characteristics.

中文翻译：

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HK-First 和 HK-Last RMG NMOS 器件中的等离子充电损坏

这项工作报告了高电压下栅极天线引起的充电损伤。 $\kappa $ (HK) 用于 HK-first 和 HK-last 集成流程的替换金属栅极 (RMG) 技术，比较板和梳状布局。对于 HK-first 器件，两种类型的天线都发生了栅极感应漏泄 (GIDL) 的显着退化，根据激活能和相应的陷阱特性对其进行了分析。HK-last 晶体管的退化归因于导致不同退化模式的顶部氧化物沉积。在这种情况下，充电损坏会导致栅极泄漏的恶化，这与天线的“纵横比”相关。基于等离子体特性解释和分析这些差异。