Electromigration (EM) has emerged as a major reliability concern for interconnects in advanced technology nodes. Most of the existing EM analysis works focus on the power lines. There exists a limited amount of work which analyzes EM failures in the signal lines. However, various emerging spintronic-based memory technologies such as the Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) and the Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) have high current densities as compared to the conventional Static Random Access Memory (SRAM). These high current densities can lead to EM failures in the signal lines such as bit-line (BL) of these memories. Furthermore, these signal lines have workload-dependent stress as opposed to the conventional DC stress of power distribution networks. In this work, we model the EM failures in the BL of a typical STT memory array with realistic workloads. The analysis is based on physics-based EM model, which is calibrated based on industrial measurement data. The results show that the current densities in the STT arrays can be large enough to cause EM failures in the signal lines with running realistic workloads and that these failures are highly workload-dependent.

中文翻译：

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新兴自旋电子存储器阵列中的工作负载感知电迁移分析

电迁移 (EM) 已成为先进技术节点互连的主要可靠性问题。大多数现有的电磁分析工作都集中在电力线上。分析信号线中的 EM 故障的工作量有限。然而，与传统的静态随机存取相比，各种新兴的基于自旋电子的存储技术，如自旋转移转矩磁性随机存取存储器 (STT-MRAM) 和自旋轨道转矩磁性随机存取存储器 (SOT-MRAM) 具有高电流密度内存（SRAM）。这些高电流密度会导致信号线（例如这些存储器的位线 (BL)）中的 EM 故障。此外，与配电网络的传统直流应力相反，这些信号线具有依赖于工作负载的应力。在这项工作中，我们对具有实际工作负载的典型 STT 存储器阵列的 BL 中的 EM 故障进行建模。该分析基于基于物理的 EM 模型，该模型基于工业测量数据进行校准。结果表明，STT 阵列中的电流密度可能大到足以在运行实际工作负载的信号线中导致 EM 故障，并且这些故障高度依赖于工作负载。