This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations. The analysis and comparison of conventional 4H-SiC JBS and 4H-SiC Multi-Buffer Layer JBS (MBL-JBS) diodes verify the resistance tolerance of the latter device to SEB. Silvaco TCAD simulation results prove that the 4H-SiC MBL-JBS modulates the drift region’s electric field distribution and disperses the high-peak electric field at the N−/N+ junction. Moreover, it reduces the impact generation rate at the Schottky, PN and N−/N+ junctions to achieve SEB tolerance. The device’s SEB performance is optimized by adjusting the 4H-SiC MBL-JBS structure parameters, and the SEB threshold voltage is significantly improved compared with the traditional structure.

中文翻译：

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高单粒子烧毁电阻 4H-SiC 结势垒肖特基二极管

本文提出了一种用于 4H-SiC 结势垒肖特基二极管 (JBS) 在高偏置电压和线性能量转移 (LET) 条件下的单粒子烧毁 (SEB) 电阻方法。该方法通过二维数值模拟得到验证。对传统 4H-SiC JBS 和 4H-SiC 多缓冲层 JBS (MBL-JBS) 二极管的分析和比较验证了后者器件对 SEB 的电阻容限。Silvaco TCAD 仿真结果证明 4H-SiC MBL-JBS 调制漂移区的电场分布并分散 N-/N+ 结处的高峰值电场。此外，它降低了肖特基、PN 和 N-/N+ 结处的冲击发生率，以实现 SEB 耐受性。通过调整4H-SiC MBL-JBS结构参数优化了器件的SEB性能，