We report on near band edge and local defects emissions in Cd_0·025Mg_0·10Zn_0·875O (CdMgZnO) nanoparticles (NPs) as a function of temperature, where a strong temperature-dependent near-infrared emission around 1.7 eV (~730 nm) has been observed. The NPs were synthesized by a modified sol-gel method and were annealed at 750 °C after growing. The crystallographic parameters have been determined by 2-dimensional synchrotron x-ray diffraction (XRD) and conventional XRD analysis, confirming their growth within the wurtzite phase with a preferred orientation along the (101) plane and an apparent crystallite size of 52.72 ± 0.18 nm. This apparent crystallite size is consistent with the nearly hexagonal particle shape (50.15 ± 0.38 nm) obtained from high resolution transmission electron microscopy. Valence Electron Energy Loss Spectroscopy (VEELS) has been conducted to gain information on the band structure and interband transitions. From the VEELS spectrum, an onset bandgap of 3.2 ± 0.3 eV was attributed to Cd/Mg co-doped ZnO. The temperature-dependent photoluminescence properties and enhancement of the optically active local defects emission have been analyzed.

我们报告了 Cd _0·025 Mg _0·10 Zn _{0·875 中的}近带边缘和局部缺陷发射O (CdMgZnO) 纳米粒子 (NPs) 作为温度的函数，在 1.7 eV (~730 nm) 附近观察到强烈的温度依赖性近红外发射。纳米颗粒通过改进的溶胶-凝胶法合成，并在生长后在 750°C 下退火。晶体学参数已通过二维同步加速器 X 射线衍射 (XRD) 和常规 XRD 分析确定，证实它们在纤锌矿相内生长，沿 (101) 面具有优先取向，表观微晶尺寸为 52.72 ± 0.18 nm . 这种明显的微晶尺寸与从高分辨率透射电子显微镜获得的近六边形颗粒形状 (50.15 ± 0.38 nm) 一致。已进行价电子能量损失光谱 (VEELS) 以获取有关带结构和带间跃迁的信息。从 VEELS 光谱来看，3.2 ± 0.3 eV 的起始带隙归因于 Cd/Mg 共掺杂的 ZnO。已经分析了与温度相关的光致发光特性和光学活性局部缺陷发射的增强。