The control of the optical properties of ZnO nanostructured thin films by using different dopant elements paves the way for the development of potential materials for photonic and optoelectronic applications. In this work manganese (Mn) doped ZnO thin films were fabricated by rapid thermal evaporation method on a glass substrate having the same Mn content level of ~10% and annealed at different temperatures. XRD analysis showed that the annealed layers have hexagonal wurtzite structure, however, the unannealed layers showed only Zn peaks without any preferential direction. The elemental analysis of the films has been investigated by XPS, which revealed the presence of Mn and oxygen atoms for all layers. In addition, it was observed by FIB-SEM that the morphology of thin films changed with the annealing temperature. For an anneal at 500 °C nanoneedles appeared. Raman spectroscopy showed E₁ (TO) mode in the sample annealed at 500 °C which was attributed with the formation of nanoneedles structures. The optical transmission of the annealed films was in the range of 75–77% and the optical bandgap varied from 3.97 to 3.72 eV. These variations are related to the structural and morphological changes of the thin films with annealing temperature.

通过使用不同的掺杂元素来控制 ZnO 纳米结构薄膜的光学特性，为开发用于光子和光电应用的潜在材料铺平了道路。在这项工作中，锰 (Mn) 掺杂的 ZnO 薄膜是通过快速热蒸发方法在具有相同 10% Mn 含量水平的玻璃基板上制造的，并在不同温度下退火。XRD 分析表明，退火层具有六方纤锌矿结构，而未退火层仅显示 Zn 峰，没有任何优先方向。XPS 对薄膜的元素分析进行​​了研究，结果表明所有层都存在 Mn 和氧原子。此外，通过 FIB-SEM 观察到薄膜的形貌随退火温度而变化。在 500 °C 下退火时，出现了纳米针。拉曼光谱显示 E样品中的₁ (TO) 模式在 500 °C 下退火，这归因于纳米针结构的形成。退火薄膜的光透射率在 75-77% 的范围内，光学带隙从 3.97 到 3.72 eV。这些变化与退火温度下薄膜的结构和形态变化有关。