The impact of graded Al_0.05Ga_0.95N sub-channel over the DC characteristics of AlGaN/GaN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) has been investigated here. By placing a field plate over the gate region and forming a T-gated structure, the breakdown characteristics are examined using Sentaurus Technology Computer-Aided Design (TCAD) simulation tool. An analytical study is carried out into the evaluation of various device parameters like drain current, transconductance and threshold voltage. RF parameters like cut-off frequency and gain has also been examined. Various physical models such as hydrodynamic, thermodynamic, piezoelectric polarization, impact ionization models are considered. HfO₂ as an oxide layer directly influences the charge confinement near the Two-Dimensional Electron Gas (2DEG), thereby causing a positive shift in the threshold voltage of the device. T-gated formation of the gate helped in enhancing the breakdown voltage of the device to nearly 750 V. A maximum current drive of 1.79 A/mm mm was obtained for the proposed device, nearly 24% improvement from the conventional Composite-channel (CC) HEMT. The current outcomes and the produced frequency characteristics determines the linearity enhancement occurred in the device, caused due to the graded AlGaN sub-channel below the GaN channel layer. The trade-off between specific on-resistance and breakdown voltage is well preserved by employing a T-gated structure with low normal gate length. The outcomes prove the device to be a prime contender for high power switching as well as large signal applications.

分级Al ₀的影响_。05 Ga _{0 . 95} N 子沟道在 AlGaN/GaN/AlInN 金属氧化物半导体 - 高电子迁移率晶体管 (MOS-HEMT) 的直流特性上进行了研究。通过在栅极区域上方放置场板并形成 T 型门控结构，使用 Sentaurus Technology 计算机辅助设计 (TCAD) 仿真工具检查击穿特性。对各种器件参数（如漏极电流、跨导和阈值电压）的评估进行了分析研究。还检查了截止频率和增益等 RF 参数。考虑了各种物理模型，例如流体动力学、热力学、压电极化、碰撞电离模型。氢氟酸₂因为氧化层直接影响二维电子气 (2DEG) 附近的电荷限制，从而导致器件阈值电压的正偏移。栅极的 T 门控形成有助于将器件的击穿电压提高到接近 750 V。所提出的器件获得了 1.79 A/mm mm 的最大电流驱动，比传统的复合通道 (CC) 提高了近 24% ) HEMT。当前结果和产生的频率特性决定了器件中发生的线性增强，这是由于 GaN 沟道层下方的渐变 AlGaN 子沟道引起的。通过采用具有低正常栅极长度的 T 型栅极结构，可以很好地保持特定导通电阻和击穿电压之间的平衡。