Performance of a direct electron detector using silicon-on-insulator (SOI) technology in a low-voltage transmission electron microscope (LVTEM) is evaluated. The modulation transfer function and detective quantum efficiency of the detector are measured under back-side illumination. The SOI-type detector is demonstrated to have high sensitivity and high efficiency for the direct detection of low-energy electrons. The detector is thus considered suitable for low-dose imaging in an LVTEM.

中文翻译：

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绝缘体上硅直接电子探测器在低压透射电子显微镜中的性能

评估了在低压透射电子显微镜 (LVTEM) 中使用绝缘体上硅 (SOI) 技术的直接电子探测器的性能。探测器的调制传递函数和探测量子效率是在背面照明下测量的。SOI型探测器被证明具有高灵敏度和高效率，可直接探测低能电子。因此，该探测器被认为适用于 LVTEM 中的低剂量成像。