A theoretical model is proposed to characterize the transient operation of Pseudo-MOSFET under gate pulses by considering the substrate effect. The analysis provides Zerbst-like expression of drain current with substrate biased in deep-depletion state. The model can be used for the extraction of carrier lifetime with process parameter variations. The dependence of temperature on carrier lifetime was also modeled by including the temperature-dependent parameters (carrier concentration and effective mobility). TCAD simulations and experiments validate our model with the temperature ranging from 300 K to 370 K.

中文翻译：

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伪 MOSFET 瞬态行为：实验、模型、衬底和温度效应

提出了一种理论模型，通过考虑衬底效应来表征栅极脉冲下伪 MOSFET 的瞬态操作。该分析提供了漏极电流的类似 Zerbst 表达式，其中衬底偏置在深耗尽状态。该模型可用于提取随工艺参数变化的载流子寿命。温度对载流子寿命的依赖性也通过包括温度相关参数（载流子浓度和有效迁移率）来建模。TCAD 模拟和实验在 300 K 到 370 K 的温度范围内验证了我们的模型。