A chemical synthesis method was used to produce Cr-doped SnO₂ nanoparticles. By using the TEM technique, the nanocrystalline nature of the Sn_1-xCr_xO₂ (0.0 ≤ x ≤ 0.1) nanopowder was confirmed. With different Cr concentrations, the electron beam deposition technique was used to deposit a series of Sn_1-xCr_xO₂ nanocrystalline thin films on a silica substrate. X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and vibrating sample magnetometry (VSM) techniques were used to examine the physical properties of the deposited films. The nanocrystalline nature of the Sn_1-xCr_xO₂ (0.0 ≤ x ≤ 0.1) thin film was confirmed by XRD and AFM morphology measurements. The XRD spectrum of the Sn_1-xCr_xO₂ nanocrystalline film demonstrated a tetragonal crystal structure with no detectable extra phases. The optical measurements showed that as the Cr content increases, the direct optical energy gap E_g decreases without any sign of solubility limit up to x ≤ 0.1. The decrease in E_g is attributed to the sp-d exchange interaction. Also, the spectral behavior of the refractive index dispersion of the Cr-doped SnO₂ indicates that as the Cr dopant increases, the refractive index of the deposited film also increases, which is attributed to the increase in the polarizability. Moreover, as the Cr content raises the atomic number, the density of the deposited film increases from 1.43 × 10²² cm⁻³ for SnO₂ to 1.57 × 10²² cm⁻³ for Sn_0·9Cr_0·1O₂. Further, the behavior of the refractive index dispersion of the deposited film was revealed using a single oscillator model proposed by Wemple-DiDomenico (WDD). Our calculations revealed that as the Cr concentration increases, the value of oscillator energy E_o decreases owing to the decrease in E_g, whereas the value of dispersion energy E_d increases because of the chemical structural changes such as the lattice parameters. Finally, the magnetic studies revealed that incorporating a small fraction of Cr into SnO₂ produces room temperature ferromagnetism in the film, which is gradually suppressed by a further increase in Cr doping. These findings indicate that the Cr-doped SnO₂ film can be recommended for optoelectronic and spintronic device applications.

化学合成方法用于生产Cr掺杂的SnO ₂纳米颗粒。通过使用 TEM 技术，确认了 Sn _1-x Cr _x O ₂ (0.0 ≤ x ≤ 0.1) 纳米粉末的纳米晶体性质。使用不同的 Cr 浓度，电子束沉积技术用于在二氧化硅基底上沉积一系列 Sn _1-x Cr _x O ₂纳米晶薄膜。X 射线衍射 (XRD)、原子力显微镜 (AFM)、光谱椭偏仪 (SE) 和振动样品磁力仪 (VSM) 技术用于检查沉积薄膜的物理性能。Sn _1-x Cr _x O的纳米晶体性质₂ (0.0 ≤ x ≤ 0.1) 薄膜通过 XRD 和 AFM 形态测量得到证实。Sn _1-x Cr _x O ₂纳米晶膜的XRD谱显示出四方晶体结构，没有可检测到的额外相。光学测量表明，随着 Cr 含量的增加，直接光能隙 E _g减小，没有任何溶解度限制的迹象，直到 x ≤ 0.1。E _g的降低归因于 sp-d 交换相互作用。此外，Cr 掺杂 SnO ₂的折射率色散的光谱行为表明随着 Cr 掺杂剂的增加，沉积膜的折射率也增加，这归因于极化率的增加。此外，随着 Cr 含量增加原子序数，沉积膜的密度从SnO _{2 的}1.43 × 10 ²² cm ^-3增加到Sn _{0 · 9} Cr _{0 · 1} O _{2 的}1.57 × 10 ²² cm ^-3. 此外，使用 Wemple-DiDomenico (WDD) 提出的单振荡器模型揭示了沉积膜的折射率色散行为。我们的计算表明，随着 Cr 浓度的增加，振荡器能量 E _o的值由于 E _{g 的}减小而减小，而色散能 E _d的值由于晶格参数等化学结构变化而增加。最后，磁性研究表明，将少量 Cr 加入 SnO _{2 中}会在薄膜中产生室温铁磁性，这种磁性会随着 Cr 掺杂的进一步增加而逐渐被抑制。这些发现表明 Cr 掺杂的 SnO ₂ 薄膜可推荐用于光电和自旋电子器件应用。