In recent years, several structure-based properties of the molecular graphs are understood through the chemical graph theory. The molecular graph GG of a molecule consists of vertices and edges, where vertices represent the atoms in a molecule and edges represent the chemical bonds between these atoms. A numerical quantity that gives information related to the topology of the molecular graphs is called a topological index. Several topological indices, contributing to chemical graph theory, have been defined and vastly studied. Recent inclusions in the class of the topological indices are the K-Banhatti indices. In this paper, we established the precise formulas for the first and second K-Banhatti, modified K-Banhatti, K-hyper Banhatti, and hyper Revan indices of silicon carbide Si2C3{{\rm{Si}}}_{2}{{\rm{C}}}_{3}-III[n,m]{\rm{III}}\left[n,m]. In addition, we present the graphical analysis along with the comparison of these indices for Si2C3{{\rm{Si}}}_{2}{{\rm{C}}}_{3}-III[n,m]{\rm{III}}\left[n,m].

中文翻译：

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Banhatti, revan 和碳化硅 Si2C3-III[n,m] 的超指数

近年来，分子图的几种基于结构的特性通过化学图论得到了理解。分子的分子图GG由顶点和边组成，其中顶点代表分子中的原子，边代表这些原子之间的化学键。提供与分子图拓扑相关信息的数值量称为拓扑索引。已经定义并广泛研究了一些有助于化学图论的拓扑指数。最近包含在拓扑指数类中的是 K-Banhatti 指数。在本文中，我们建立了碳化硅 Si2C3{{\rm{Si}}}_{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2}{2} {\rm{C}}}_{3}-III[n,m]{\rm{III}}\left[n,m]。