The activation of Type III heterojunctions through inserting plasmonic metal nanoparticles (NP) between the semiconductor components as a bridge for the selective capture and interband transfer of the photothermal-induced charges and constructing a robust Type B heterojunction photothermocatalyst shows the potential to overcome the trade-off between light response range and redox potentials of the mainstream Type II, Z-scheme, and S-scheme heterojunctions. A series of Type B heterojunctions CuWO₄/Ag/GdCrO₃, WO₃/Ag/GdCrO₃, and Bi₂WO_6–xF_2x/Ag/GdCrO₃ are constructed through introducing a plasmonic Ag NP bridge, and the relation between the required plasmonic intensity of the bridge and energy barrier of the parent heterojunctions is correlated. The as-developed Type B heterojunction WO₃/Ag/GdCrO₃ exhibits a 73 times higher photothermocatalytic toluene degradation rate and a 44 times higher photothermocatalytic CO yielding rate from CO₂ reduction than those of parent Type III WO₃/GdCrO₃, and ranges among the best of state-of-the-art photocatalytic or photothermocatalytic performance in both VOC oxidation and CO₂ reduction.

中文翻译：

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等离子金属桥将 III 型异质结连接到坚固的 B 型光热催化剂

通过在半导体组件之间插入等离子体金属纳米粒子 (NP) 作为选择性捕获和带间转移光热诱导电荷的桥梁并构建坚固的 B 型异质结光热催化剂来激活 III 型异质结，这显示了克服交易的潜力在主流 II 型、Z 型和 S 型异质结的光响应范围和氧化还原电位之间关闭。一系列B型异质结CuWO ₄ /Ag/GdCrO ₃、WO ₃ /Ag/GdCrO ₃和Bi ₂ WO _{6– x} F _{2 x} /Ag/GdCrO ₃是通过引入等离子体 Ag NP 桥构建的，并且桥所需的等离子体强度与母异质结的能量势垒之间的关系是相关的。所开发的 B 型异质结 WO ₃ /Ag/GdCrO _{3 的}光热催化甲苯降解率和 CO ₂还原的光热催化CO 产率比母体 III 型 WO ₃ /GdCrO ₃高 44 倍，并且范围在 VOC 氧化和 CO ₂还原方面均处于最先进的光催化或光热催化性能之列。