Plasma polymerized organosilicon thin films were deposited in a MW-PECVD using hexadimethylsiloxane (HMDSO) as a precursor. Thin films were synthetized with different plasma conditions ranging from soft (low plasma energy) to hard (high plasma energy) ones. Quantitative ²⁹Si solid state NMR and FTIR spectroscopy were used to characterize the bulk composition. X-ray photoelectron spectroscopy (XPS) coupled with Density Functional Theory (DFT) calculations were used to determine the surface chemical composition. In addition, water contact angle (WCA) measurements were performed in order to complete the surface characterization. The bulk and the surface of the plasma polymerized HMDSO (PP-HMDSO) showed a complex chemical composition. The four main environments M, D, T and Q were present in the films. An additional environment Si(CH₂)(CH₃)₃ denoted S was detected in the PP-HMDSO films. The chemical composition comparison showed a difference between the bulk and the surface of the films. Under soft plasma conditions, a high amount of SiOC₃ termination was present in the bulk of the films. While, the SiO₂C₂ chains were highly present on the surface. On the other hand, under hard plasma conditions, the number of the SiOC₃ termination increased on the surface and decreased in the bulk. Under soft plasma conditions, the PP-HMDSO structure was close to PDMS, while under hard plasma conditions, the PDMS similarity was lost.

使用六二甲基硅氧烷 (HMDSO) 作为前体，在 MW-PECVD 中沉积等离子体聚合有机硅薄膜。薄膜是在不同的等离子体条件下合成的，范围从软（低等离子体能量）到硬（高等离子体能量）。定量²⁹Si 固态 NMR 和 FTIR 光谱用于表征整体组成。X 射线光电子能谱 (XPS) 结合密度泛函理论 (DFT) 计算用于确定表面化学成分。此外，还进行了水接触角 (WCA) 测量以完成表面表征。等离子体聚合 HMDSO (PP-HMDSO) 的本体和表面显示出复杂的化学成分。电影中存在四个主要环境 M、D、T 和 Q。附加环境 Si(CH ₂ )(CH ₃ ) ₃在 PP-HMDSO 薄膜中检测到 S。化学成分比较表明薄膜的体积和表面之间存在差异。在软等离子体条件下，大量的 SiOC ₃终端存在于大部分薄膜中。同时，SiO ₂ C ₂链高度存在于表面上。另一方面，在硬等离子体条件下，SiOC ₃末端的数量在表面增加而在块体中减少。在软等离子体条件下，PP-HMDSO 结构与 PDMS 接近，而在硬等离子体条件下，PDMS 的相似性丢失。