ABSTRACT

In this work, ZnS_0.2Se_0.8 thin films doped with Fe of various concentrations were spray deposited to investigate the influence of Fe doping concentration on the most significative structural, morphological, optical and electrical properties. An X-ray diffraction study showed that all films were polycrystalline and had a cubic zinc blende crystal structure. SEM showed that the Fe-doped ZnS_0.2Se_0.8 thin films had a spherical-like structure with agglomeration of grains and that their particle size was slightly increased. EDAX confirmed that the ZnS_0.2Se_0.8 lattice was doped with Fe. An optical study indicated that there was a direct allowed type transition. The band gap of ZnS_0.2Se_0.8 thin films sharply increased to 3.25 eV with Fe doping upto 0.2 mol% and then gradually decreased with increasing Fe doping concentration. DC electrical resistivity measurements confirmed that the films were semiconducting; with a minimum resistivity of 0.617 × 10⁵ Ω-cm. Hall Effect and thermoelectric power measurements confirmed n-type conductivity.

摘要

在这项工作中，喷射沉积了掺杂不同浓度 Fe 的ZnS _0.2 Se _0.8薄膜，以研究 Fe 掺杂浓度对最重要的结构、形态、光学和电学性能的影响。X 射线衍射研究表明所有薄膜都是多晶的并且具有立方闪锌矿晶体结构。SEM表明Fe掺杂的ZnS _0.2 Se _0.8薄膜具有球形结构，颗粒团聚，粒径略有增大。EDAX 证实ZnS _0.2 Se _0.8晶格掺杂有Fe。光学研究表明存在直接允许的类型转换。ZnS 的带隙_0.2 Se _0.8薄膜在 Fe 掺杂量达到 0.2 mol% 时急剧增加到 3.25 eV，然后随着 Fe 掺杂浓度的增加而逐渐降低。直流电阻率测量证实薄膜是半导体的；最小电阻率为 0.617 × 10 ⁵ Ω-cm。霍尔效应和热电功率测量证实了 n 型电导率。