In this paper, we report a high-performance AlGaN/GaN Schottky barrier diode (SBD) based on super-lattice structure. The stacking of five AlGaN/GaN heterostructures yields a small sheet resistance (R_SH) of 120 Ω/sq. The fully recessed anode structure is used to contact all the current channels, leading to a small turn-on voltage (V_ON) of 0.44 V. Besides, the ohmic contact with a contact resistance (R_C) of 0.17 Ω mm is obtained by etching the cathode region. The on-resistance (R_ON) of the device is reduced by 63.8%, down to 1.7 Ω mm, and a forward voltage (V_F) as low as 0.81 V is achieved. To the best of our knowledge, this V_F is the lowest value among all the GaN SBDs. These results are superior to the conventional single heterojunction devices, showing the great potential of the GaN-based super-lattice structures for achieving low forward conduction losses.

在本文中，我们报告了一种基于超晶格结构的高性能 AlGaN/GaN 肖特基势垒二极管 (SBD)。五个 AlGaN/GaN 异质结构的堆叠产生了120 Ω/sq的小薄层电阻 ( R _SH )。全凹入式阳极结构用于接触所有电流通道，导致0.44 V的小导_通电压 ( V _ON )。此外，接触电阻 ( R _C ) 为 0.17 Ω mm的欧姆接触由下式获得蚀刻阴极区。该器件的导_通电阻 ( R _ON ) 降低了 63.8%，降至 1.7 Ω mm，并实现了低至 0.81 V的正向电压 ( V _F )。据我们所知，这个V_F是所有 GaN SBD 中的最小值。这些结果优于传统的单异质结器件，显示了基于 GaN 的超晶格结构在实现低正向传导损耗方面的巨大潜力。