Herein, thin films of PbI₂ with different Ni-doping concentrations (0.0, 1.0, 3.0, 5.0 and 7.5 wt%) have been fabricated using spin coating method. The fabricated films possess a hexagonal crystalline structure and growth along the (001) plane, as-confirmed by XRD analysis. EDS elemental-mapping confirmed the uniform doping of Ni throughout the PbI₂ films. SEM images reveal the formation of nanoparticles/sheets with sizes of ⁓100 nm in the fabricated films. An optical absorption study reveal the change in absorption edge of PbI₂ observed upon Ni doping. The fabricated films are highly transparent (i.e. 80–86%) in the visible to near-infra red region. The energy gap of PbI₂ was determined to be 2.34 eV, which increased to 2.45 eV for the 5 wt% Ni@PbI₂ film. The fabricated films show photoluminescence quenching when doped with Ni. The refractive index values were determine to be between 1.73 to 3.37 in the whole region studied. Furthermore, the dielectric-electrical-non-linear optical parameters were also determined. The ${\chi }^{\left(1\right)}$, ${\chi }^{\left(3\right)}$ and $n^{\left(1\right)}$ values were estimated to be in range of 0.16–0.83, 1.1 × 10⁻¹³ to 7.8 × 10⁻¹¹ esu and 2.3 × 10⁻¹² to 8.7 × 10⁻¹⁰ esu, respectively. It was noticed that these parameters were enhanced upon Ni doping up to 5.0 wt%. The enhanced opto-non-linear properties of PbI₂ by Ni doping makes it a suitable candidate for optoelectronic applications.

在此，使用旋涂法制备了具有不同 Ni 掺杂浓度（0.0、1.0、3.0、5.0 和 7.5 wt%）的 PbI ₂薄膜。XRD 分析证实，制造的薄膜具有六边形晶体结构和沿 (001) 面生长。EDS 元素映射证实了整个 PbI ₂薄膜中 Ni 的均匀掺杂。SEM 图像显示在制造的薄膜中形成了尺寸为⁓100 nm 的纳米颗粒/薄片。光学吸收研究揭示了在 Ni 掺杂时观察到的 PbI ₂吸收边缘的变化。制造的薄膜在可见光到近红外区域是高度透明的（即 80-86%）。PbI ₂的能隙被确定为 2.34 eV，对于 5 wt% Ni@PbI ₂薄膜增加到 2.45 eV 。当掺杂有 Ni 时，制造的薄膜显示出光致发光猝灭。在整个研究区域中，折射率值被确定为介于 1.73 到 3.37 之间。此外，还确定了介电-电-非线性光学参数。这${\chi }^{\left(1\right)}$, ${\chi }^{\left(3\right)}$ 和 $n^{\left(1\right)}$估计值分别在 0.16–0.83、1.1 × 10 ^-13至 7.8 × 10 ^-11 esu 和 2.3 × 10 ^-12至 8.7 × 10 ^-10 esu 的范围内。注意到这些参数在 Ni 掺杂至 5.0 wt% 时得到增强。通过 Ni 掺杂增强的 PbI ₂光非线性特性使其成为光电应用的合适候选者。